Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-25
2000-02-01
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438588, 438653, H01L 2144
Patent
active
060202602
ABSTRACT:
A semiconductor device having a nitrogen-bearing gate electrode and method of fabricating the same is provided. Consistent with the invention, a semiconductor device is formed by forming a gate oxide layer on a surface of a substrate. Over the gate oxide layer is formed a lower polysilicon layer with a first nitrogen concentration. Over the lower polysilicon layer, there is formed an upper polysilicon layer with a second nitrogen concentration less than the first nitrogen concentration. The two polysilicon layers are used to form at least one gate electrode.
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Kuroi, Novel NICE (Nitrogen Implatation into CMOS Gate Electrode and Source-Drain) Structure for High Reliability and High performance 0.25 micrometers Dual Gate CMOS, IEEE, 13.2.1-13.2.4, 1993.
Advanced Micro Devices , Inc.
Berry Renee R.
Bowers Charles
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