Programming an IGFET read-only-memory

Details Programming an IGFET read-only-memory Programming an IGFET read-only-memory

1979-11-28

1981-10-13

Hecker, Stuart N.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 91, 365104, G11C 1700, G11C 1140

Patent

active

042952093

ABSTRACT:
An IGFET ROM is programmed later in its process of manufacture. An array of IGFETs having an operable channel region and gate electrode is provided. The gate electrode is penetrable by an ion beam. A first dielectric penetrable by the ion beam is deposited onto the array. A second dielectric not penetrable by the ion beam is then deposited onto the array. Windows are then etched into the second dielectric material but not the first, over channel regions of selected IGFETs. The wafer surface is given an ion implantation to change threshold voltage of those IGFETs selected. A metallization pattern is formed on the second dielectric, with the first dielectric providing an insulating coating for gate electrode portions otherwise exposed within the aforementioned windows.

REFERENCES:
patent: 3541543 (1970-11-01), Crawford et al.
patent: 3751722 (1973-08-01), Richman
patent: 3775191 (1973-11-01), McQuhae
patent: 3914855 (1975-10-01), Cheney et al.
patent: 4091406 (1978-05-01), Lewis
patent: 4097889 (1978-06-01), Kern et al.
patent: 4103415 (1978-08-01), Hayes
patent: 4129936 (1978-12-01), Takei et al.
patent: 4136434 (1979-01-01), Thibault et al.
patent: 4149307 (1979-04-01), Henderson
patent: 4169270 (1979-09-01), Hayes
patent: 4198693 (1980-04-01), Kuo
"ROM Program Process May Beat EPROMS in Turn-Around Time", Electronics, pp. 39-40, 5/25/78.

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