Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1998-04-17
2000-02-01
Utech, Benjamin
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117104, C03B 2300
Patent
active
060198397
ABSTRACT:
A method and apparatus for forming an epitaxial titanium silicide film is described. According to the present invention, a monocrystalline silicon substrate is placed in a deposition chamber and heated to a temperature between 710-770.degree. C. A silicon source gas and titanium tetrachloride are then provided into the deposition chamber. The deposition pressure is maintained between 5-10 torr. An epitaxial titanium silicide film is then formed on the substrate from the silicon source gas and the titanium tetrachloride.
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Achutharaman Vedapuram S.
Swenberg Johanes
Applied Materials Inc.
Champagne Donald J.
Utech Benjamin
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