Detecting method of impurity concentration in crystal, method fo

Details Detecting method of impurity concentration in crystal, method fo Detecting method of impurity concentration in crystal, method fo

1997-11-25

2000-02-01

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 15, 117 30, 117 32, 117917, C30B 1520

Patent

active

060198370

ABSTRACT:
A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

REFERENCES:
patent: 4496424 (1985-01-01), Terashima et al.
patent: 4794086 (1988-12-01), Kasper et al.
patent: 5349921 (1994-09-01), Barraclough et al.
patent: 5524574 (1996-06-01), Huang et al.

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