Single crystal silicon substrate

Details Single crystal silicon substrate Single crystal silicon substrate

1990-03-14

1992-06-23

Kunemund, Robert

Metal treatment

Barrier layer stock material, p-n type

With recess, void, dislocation, grain boundaries or channel...

148 333, 156603, 156604, 437 46, 437 62, 437 83, 437 84, 437174, 437233, 437973, H01L 21205, H01L 2184

Patent

active

051239752

ABSTRACT:
A single crystal silicon substrate which comprises an electric insulation member and a single crystal silicon film formed on the insulation member. The silicon film has first regions and second regions. Each of the first regions is formed as a strip shape and has a high density of inorganic impurities implanted thereinto. Each of the second regions is formed as a strip shape and has a low density of the impurities. The first and second regions are alternatively arranged contacting with each other so that the first regions are separated from each other.

REFERENCES:
patent: 3950188 (1976-04-01), Bower
patent: 4662059 (1987-05-01), Smeltzer
patent: 4743567 (1988-05-01), Pandya
patent: 4752590 (1988-06-01), Adams

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