Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1993-10-05
1994-12-27
Powell, William
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156655, 1566591, 156662, 437 78, 437203, H01L 21306, B44C 122
Patent
active
053762290
ABSTRACT:
A method for processing coplanar semiconductor devices of different types as provided. The method includes the steps of: forming a first layer for formation of a first device region on a substrate, forming an epitaxial semiconductor lift-off layer above the first device region, removing a portion of the first device region to open areas for the formation of the second device region, depositing epitaxially a second device region, and removing the liftoff layer to leave the first and second device regions remaining on the substrate.
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patent: 4908328 (1990-03-01), Hu et al.
S. Hiyamizu et al., Lateral Definition of Monocrystalline GaAs Prepared by Molecular Beam Epitaxy, Jul. 1980, Journal Electrochem. Soc., pp. 1562-1567.
A. Y. Cho et al., GaAs planar technology by molecular beam epitaxy (MBE), vol. 46, No. 2, Feb. 1975, Journal of Applied Physics, pp. 783-785.
Lester Steven D.
Mars Danny E.
Miller Jeffrey N.
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