Method of making semiconductor device/circuit having at least pa

Details Method of making semiconductor device/circuit having at least pa Method of making semiconductor device/circuit having at least pa

1994-03-21

1996-03-26

Fourson, George

Fishing, trapping, and vermin destroying

437 41, 437101, 437953, 257350, H01L 21335, H01L 2184

Patent

active

055019897

ABSTRACT:
Amorphous silicon in impurity regions (source and drain regions or N-type or p-type regions) of TFT and TFD are crystallized and activated to lower electric resistance, by depositing film having a catalyst element such as nickel (Ni), iron (Fe), cobalt (Co) or platinum (Pt) on or beneath an amorphous silicon film, or introducing such a catalyst element into the amorphous silicon film by ion implantation and subsequently crystallizing the same by applying heat annealing at an appropriate temperature.

REFERENCES:
patent: 4727044 (1988-02-01), Yamazaki
patent: 5147826 (1992-09-01), Liu et al.
patent: 5275851 (1994-01-01), Fonash et al.
C. Hayzelden et al., "In Situ Transmission Electron Microscopy Studies of Silicide-Mediated Crystallization of Amorphous Silicon", Mar. 1993, pp. 921-924.
A. V. Dvurechenskii et al., "Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals", Akademikian Lavrentev Prospekt 13, 630090 Novosibirsk 90, USSR, pp. 635-640, 1990.
T. Hempel et al., "Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films", Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

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