High speed IGBT

Details High speed IGBT High speed IGBT

1997-01-16

1998-09-15

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257566, H01L 2976

Patent

active

058083456

ABSTRACT:
An auxiliary MOSFET is integrated into a lateral IGBT structure with the source and drain of the auxiliary MOSFET in parallel with the emitter-base circuit of the IGBT. A driver, integrated with the IGBT chip, turns off the base emitter voltage to the IGBT before turning off the auxiliary MOSFET during turn off. The auxiliary MOSFET is turned off again at the beginning of the conduction period to ensure full conductivity modulation of the DMOS drain and maximum gain of the PNP transistor. Short circuit protection and overtemperature protection circuits are also integrated into the chip.

REFERENCES:
patent: 4604535 (1986-08-01), Sasayama et al.
patent: 5198691 (1993-03-01), Tarng

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