Field emission displays with reduced light leakage

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438649, 438651, 438655, 438658, 438664, 438682, H01L 214763

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active

059566116

ABSTRACT:
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

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A.T.S. Wee, A.C.H. Huan, T. Osipowicz, K.K. Lee, W.H. Thian, K.L. Tan, R. Hogan; "Surface and Interface Studies of Titanium Silicode Formation"; Thin Solid Films (1996), pp. 130-134.
Youn Tae Kim, Chi-Hoon Jun, Jin Ho Lee, Jong Tae Baek, and Hyung Joun Yoo; "TIN Barrier Layer Formation By the Two-Step Rapid Thermal Conversion Process"; Nov./Dec. 1996, pp. 3245-3250.

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