Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1997-05-05

1999-07-06

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438607, 438640, H01L 2144

Patent

active

059207957

ABSTRACT:
A method for manufacturing a semiconductor device is disclosed herein by which the contamination of an epitaxial film-Si substrate interface with carbon can be solved without allowing boron to remain in the epitaxial film-Si substrate interface. The method for manufacturing a semiconductor device according to the present invention comprises a step of ion-implanting, into an Si substrate, an element or a compound which easily reacts with carbon, a step of removing a natural oxide film on the Si substrate, a step of annealing, at a temperature of 800.degree. C. or less in a CVD device, the Si substrate which has been subjected to the ion-implantation and the removal of the natural oxide film by the above two steps, and a step of carrying out an Si epitaxial growth or an Si.sub.1-x Ge.sub.x epitaxial growth on the annealed substrate by the CVD device.

REFERENCES:
patent: 4717681 (1988-01-01), Curran
patent: 5516710 (1996-05-01), Boyd et al.
"Investigations on Hydrophilic and Hydrophobic Silicon (100) Wafer Surfaces by X-Ray Photoelectron and High-Resolution Electron Energy Loss-Spectroscopy" Grundner et al; Appl. Phys. A 39; pp. 73-82; 1986.

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