Method for manufacturing a through hole

Details Method for manufacturing a through hole Method for manufacturing a through hole

1996-10-30

1999-07-06

Everhart, Caridad

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438634, 438636, 438669, 438700, 438740, H01L 21461

Patent

active

059207930

ABSTRACT:
An underlying interconnecting layer is formed on a semiconductor substrate and a first insulating layer is formed on the underlying interconnecting layer and these are patterned. Next, a second insulating layer which is different in material from the first insulating layer is formed on the patterned first insulating layer and the semiconductor substrate and a portion of the second insulating layer is removed by etching to expose a portion of the first insulating layer. Next, the exposed first insulating layer is removed by etching. Next, a conductive layer is implanted in a through hole which is made in the removed first insulating layer and removed second insulating layer. Interconnecting layers are then formed on the conductive layer and the second insulating layer.

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patent: 5451543 (1995-09-01), Woo et al.
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patent: 5496771 (1996-03-01), Cronin et al.
patent: 5505816 (1996-04-01), Barnes et al.
patent: 5700737 (1997-12-01), Yu et al.
patent: 5707883 (1998-01-01), Tabara

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