Method of fabricating a hybrid polysilicon/amorphous silicon TFT

Details Method of fabricating a hybrid polysilicon/amorphous silicon TFT Method of fabricating a hybrid polysilicon/amorphous silicon TFT

1997-06-27

1999-07-06

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438159, 438166, 438486, 438487, H01L 21336, H01L 2184

Patent

active

059207728

ABSTRACT:
The present invention discloses a hybrid polysilicon/amorphous silicon TFT device for switching a LCD and a method for fabrication wherein a n.sup.+ doped amorphous silicon layer is advantageously used as a mask during a laser annealing process such that only a selected portion of a hydrogenated amorphous silicon layer is converted to a crystalline structure while other portions retain their amorphous structure. As a result, a polysilicon TFT and at least one amorphous silicon TFT are formed in the same structure and the benefits of both a polysilicon TFT and amorphous silicon TFT such as a high charge current and a low leakage current are retained in the hybrid structure.

REFERENCES:
patent: 4581620 (1986-04-01), Yamazaki et al.
patent: 5262350 (1993-11-01), Yamazaki et al.
patent: 5536932 (1996-07-01), Hack et al.
patent: 5585647 (1996-12-01), Nakajima et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5614729 (1997-03-01), Ukai et al.
patent: 5648662 (1997-07-01), Zhang et al.
patent: 5717223 (1998-02-01), Hack et al.
patent: 5728610 (1998-03-01), Gosain et al.
patent: 5733804 (1998-03-01), Hack et al.

Affiliated with

Also associated with

Rating

Method of fabricating a hybrid polysilicon/amorphous silicon TFT does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating a hybrid polysilicon/amorphous silicon TFT, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating a hybrid polysilicon/amorphous silicon TFT will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-906937