Apparatus for controlling thermal transfer in a cyclic vacuum pr

Heat exchange – With retainer for removable article – Including liquid heat exchange medium

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118724, 118728, 118733, 118 50, 165 39, 165 86, 165185, 269903, F28F 900

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045276200

ABSTRACT:
Apparatus for providing thermal transfer between a semiconductor wafer and a heat sink or source in a vacuum processing chamber includes a platen against which the wafer is sealed to define a thermal transfer region therebetween. The platen includes a passage for gas flow between the chamber and the thermal transfer region and a conduit for circulation of a cooling fluid. The platen further includes a fluid-actuated valve responsive to the pressure of the cooling fluid for closing the passage. When the pressure in the chamber reaches a predetermined value, the cooling fluid is turned on and closes the valve. Gas at the predetermined pressure, typically in the range of 0.5 to 100 Torr, is trapped in the thermal transfer region and conducts thermal energy. In a preferred embodiment, a plurality of platens are positioned on a rotating disc in an ion implantation system.

REFERENCES:
patent: 3566960 (1969-08-01), Stuart
patent: 4261762 (1981-04-01), King
patent: 4282924 (1981-08-01), Faretra
patent: 4453080 (1984-06-01), Berkowitz
patent: 4457359 (1984-07-01), Holden
patent: 4458746 (1984-07-01), Holden et al.
patent: 4491173 (1985-01-01), Demand
King et al., "Experiments on Gas Cooling of Wafers," Nucl. Instrum. Methods, 189 (1981) pp. 169-173.
Hammer, "Cooling Ion Implantation Target," IBM Technical Disclosure Bulletin, vol. 19, No. 6, Nov. 1976, pp. 2270-2271.
Mack, "Wafer Cooling in Ion Implantation," Ion Implantation: Equipment and Techniques, Proc. Fourth Int. Conf., Sep. 1982, (Springer-Verlag, 1983), pp. 221-233.
Model 80-10 High Current Ion Implantation System Brochure, Varian/Extrion Division, Feb. 1982.

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