Semiconductor memory

Details Semiconductor memory Semiconductor memory

1989-12-19

1993-05-25

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257618, 257629, H01L 2968, H01L 2906, H01L 2702, H01L 2934

Patent

active

052144968

ABSTRACT:
A semiconductor memory comprises a capacitor with a data storage portion, and an insulated-gate field-effect transistor. The capacitor is formed by a plate which is made up of the side walls and base of a groove formed in a semiconductor substrate, and by a capacitor electrode formed on the side walls and the base, over an insulation film, and which is connected electrically to the source or drain of the insulated-gate field-effect transistor. Various embodiments are provided for reducing size and preventing leakage between other memory cells, including forming stacked capacitors, forming the transistor over the capacitor, using a silicon-over-insulator arrangement for the transistor, forming a common capacitor plate and providing high impurity layers within the substrate.

REFERENCES:
patent: 3962713 (1976-06-01), Kendall et al.
patent: 4327476 (1982-05-01), Iwai et al.
patent: 4432006 (1984-02-01), Takei
Lu, "High-Capacitance Dynamic RAM Cell . . . " IBM TDB vol. 26, No. 3B Aug. 1983, pp. 1318-1322.

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