Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-12-13
1993-05-25
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257374, 257506, 257586, 257588, 257622, 257623, 257755, 257756, 257757, H01L 2702, H01L 2712, H01L 2906
Patent
active
052143023
ABSTRACT:
A semiconductor integrated circuit device having a structure in which each of the following regions, that is, a first region for forming the base and emitter regions of each of the bipolar transistors, a second region for forming the collector lead-out region of the bipolar transistor, and a third region for forming each of the MISFETs, is projected from the main surface of a semiconductor substrate, whereby it is possible to effect isolation between the MISFETs and between these MISFETs and the bipolar transistors with the same isolation structure and in the same manufacturing step as those for the isolation between the bipolar transistors. In this device, furthermore, the base region of the bipolar transistor is electrically and self-alignedly connected to a base electrode which is formed over the main surface so as to surround the emitter region. The bipolar transistor is characterized as a self-alignment transistor and that the insulating side wall spacers corresponding to the gate and base (emitter) electrodes are formed by a same lever.
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Higeta Keiichi
Odaka Masanori
Ogiue Katsumi
Tamba Nobuo
Uchida Akihisa
Carroll J.
Hitachi , Ltd.
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