Method for generating resist structures

Details Method for generating resist structures Method for generating resist structures

1988-03-10

1989-03-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156668, 156904, 427 431, 427 541, 430296, B44C 122, B29C 3700, C03C 1500, C03C 2506

Patent

active

048122009

ABSTRACT:
In generating resist structures according to bilayer technology a series of requirements is made of silicon-containing positive resists. The new method is intended to ensure, inter alia, the profile retention respectively the ability of the resist structures to maintain precise dimensions. According to the invention vinyl phenol-vinyl silane copolymers are used as resist materials.

REFERENCES:
patent: 3125554 (1964-03-01), Cooper et al.
patent: 4481049 (1984-11-01), Reichmanis et al.
patent: 4521274 (1985-06-01), Reichmanis et al.
Buiguez et al., "A New Positive Optical Resist for Bilayer Resist Systems", in Heuberger et al., eds. Microcircuit Engineering 84, Academic Press, Inc., 1985.
Wilkins, Jr. et al., "An Organosilicon Resin for Multilevel Resist Applications", J. Vac. Sci. Technol. B3, 306, (1985).
Saotome et al., "A Silicon Containing Positive Photoresist (SIPR) for a Bilayer Resist", J. Electrochem. Soc., 132, 909, (1985).

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