Compact self-aligned body contact silicon-on-insulator transisto

Details Compact self-aligned body contact silicon-on-insulator transisto Compact self-aligned body contact silicon-on-insulator transisto

1997-07-16

1999-07-27

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438167, 438570, H01L 27095, H01L 29812

Patent

active

059306050

ABSTRACT:
A field effect transistor structure having: a first type conductivity semiconductor body disposed on an insulator and having formed in different regions thereof: (a) a source region; (b) a drain region, such source and drain regions being of a conductivity type opposite the conductivity type of the body; (c) a gate electrode adapted to control a flow of carriers in a channel through the semiconductor body between the source and drain regions; and (d) a Schottky contact region providing a Schottky diode between the semiconductor body and one of the source and drain regions. With such an arrangement, the Schottky diode, when forward biased provides a fixed voltage, about 0.3 V, between the semiconductor body and one of the source and drain regions. A method for forming a semiconductor structure, comprising the steps of: providing a semiconductor body over an electrical insulator; providing source and drain areas in the semiconductor body on either side of a gate channel; introducing dopant into un-masked portions of the source and drain areas to form source and drain regions in the semiconductor body, such mask blocking such dopant from passing into the masked portion of at least one of the source and drain areas and the contiguous portion of the semiconductor body; and forming a metal between the masked portion of the at least one of the source and drain regions and the contiguous portion of the semiconductor body. The metal forming step may be performed prior to, or subsequent to, the dopant introduction step.

REFERENCES:
patent: 4053916 (1977-10-01), Cricchi et al.
patent: 4254428 (1981-03-01), Feth et al.
patent: 4771323 (1988-09-01), Sasaki
patent: 4801983 (1989-01-01), Ueno et al.
patent: 4809056 (1989-02-01), Shirato et al.
patent: 4823172 (1989-04-01), Mihara
patent: 4871686 (1989-10-01), Davies
patent: 4899202 (1990-02-01), Blake et al.
patent: 4965643 (1990-10-01), Freeman
patent: 5014108 (1991-05-01), O'Mara, Jr. et al.
patent: 5109256 (1992-04-01), De Long
patent: 5160989 (1992-11-01), Houston
patent: 5293052 (1994-03-01), Cherne et al.
patent: 5317181 (1994-05-01), Tyson
patent: 5320971 (1994-06-01), Eklund et al.
patent: 5424225 (1995-06-01), Yamaguchi et al.
patent: 5591650 (1997-01-01), Hsu et al.
patent: 5629544 (1997-05-01), Voldman et al.
patent: 5729039 (1998-03-01), Beyer et al.
patent: 5804858 (1998-08-01), Hsu et al.
patent: 5821575 (1998-10-01), Mistry et al.

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