Semiconductor Bi-MIS device

Details Semiconductor Bi-MIS device Semiconductor Bi-MIS device

1997-08-20

1998-11-17

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257324, 257370, 257555, 257627, H01L 2702, H01L 2968

Patent

active

058380485

ABSTRACT:
A silicon oxide film and a polysilicon film are formed on a silicon substrate and are selectively etched to form a contact hole in a region where an emitter is to be formed. A polysilicon film is laid on the substrate and two polysilicon films are patterned to form an emitter electrode and a gate electrode made of the two polysilicon films which are doped with arsenic. The arsenic is diffused from the polysilicon films of the emitter electrode into the silicon substrate to form an N.sup.+ emitter layer which has a high concentration and is shallow. Consequently, the contamination of a gate insulator film can be prevented from occurring and a bipolar transistor having high performance, for example, a high current amplification factor or the like can be formed.

REFERENCES:
patent: 4247861 (1981-01-01), Hsu et al.
patent: 4484388 (1984-11-01), Iwasaki
patent: 5005066 (1991-04-01), Chen

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