TFT-array and manufacturing method therefor

Details TFT-array and manufacturing method therefor TFT-array and manufacturing method therefor

1997-05-19

1998-11-17

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 57, 257 61, 257 66, 257350, H01L 27108, H01L 2701, H01L 2712

Patent

active

058380370

ABSTRACT:
A TFT-array including a substrate, a gate electrode, a first and second electrode provided on the substrate simultaneously with the gate electrode, an insulating film formed on the gate electrode, the first and the second electrode, a semiconductor layer formed on the gate electrode in such a manner that the insulating film is interposed between the semiconductor layer and the gate electrode, a pair of electrodes, either of which is connected with the first electrode or the second electrode, said pair of electrodes defining a semiconductor element together with the semiconductor layer.

REFERENCES:
patent: 5528055 (1996-06-01), Komori et al.
patent: 5648663 (1997-07-01), Kitahara et al.
K. Saigusa, et al., "Display Properties of a wide-viewing-angle in-plane-switching TFT-LCD", IPS/LCD, vol. 2, pp. 311-312.

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