Method of manufacturing semiconductor device with shallow impuri

Details Method of manufacturing semiconductor device with shallow impuri Method of manufacturing semiconductor device with shallow impuri

1995-12-21

1998-11-17

Dang, Trung

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438530, 438526, 438514, H01L 21425

Patent

active

058375970

ABSTRACT:
A method of manufacturing a semiconductor device in which a first ion implantation is carried out into a semiconductor substrate. Then, a second ion implantation is carried out to a projection range deeper than that of the first ion implantation. The ions of the second implantation are formed from the same type of atoms constituting the semiconductor substrate or from impurity atoms having the same conduction type as the semiconductor substrate at the projection range of the second ion implantation. A further ion implantation may be carried out to electrically shield the second implantation, or the method may be carried out in a SOI substrate with the second implantation extending through the insulating layer of the SOI structure.

REFERENCES:
patent: 4889819 (1989-12-01), Davari et al.
patent: 4961165 (1990-10-01), Ema
patent: 5145794 (1992-09-01), Kase et al.
patent: 5378650 (1995-01-01), Kimura
patent: 5538913 (1996-07-01), Hong
patent: 5654210 (1997-08-01), Aronowitz et al.
T. Shibata et al., "Formation of Ultra-Shallow Low-Reverse Current n+p Junctions by 450.degree.C. Furnace Annealing", IEEE 1990, pp. 63 and 64.

Affiliated with

Also associated with

Rating

Method of manufacturing semiconductor device with shallow impuri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing semiconductor device with shallow impuri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing semiconductor device with shallow impuri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-884009