Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-09-03
1998-11-17
Chaudhari, Chandra
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438240, 438253, H01L 2120, H01L 218242
Patent
active
058375937
ABSTRACT:
A microelectronic capacitor is formed by forming a first tantalum pentoxide film on a conductive electrode and annealing the first tantalum pentoxide film in the presence of ultraviolet radiation and ozone. The forming step and annealing step are then repeated at least once to form at least a second tantalum pentoxide film which has been annealed in the presence of ultraviolet radiation, on the first tantalum pentoxide film. A second conductive electrode may then be formed on the tantalum pentoxide layer. The resultant tantalum pentoxide layer can have a thickness which exceeds 45 .ANG., yet has a reduced leakage current by filling the oxygen vacancies across the thickness thereof.
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patent: 5661319 (1997-08-01), Fujii et al.
patent: 5688724 (1997-11-01), Yoon et al.
Shinriki et al., UV-O.sub.2 : Two-Step Annealed Chemical Vapor-Deposited Ta.sub.2 O .sub.5 Films for Storage Dielectrics of 64-Mb DRAM's, IEEE Transactions on Electron Devices, vol. 38, No. 3, Mar. 1991, pp. 455-462.
Kim Eui-song
Park In-sung
Chaudhari Chandra
Samsung Electronics Co,. Ltd.
Thomas Toniae M.
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