High voltage insulated gate type bipolar transistor for self-iso

Details High voltage insulated gate type bipolar transistor for self-iso High voltage insulated gate type bipolar transistor for self-iso

1997-03-26

1999-07-27

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257378, 257409, H01L 2976, H01L 2994, H01L 31062

Patent

active

059294850

ABSTRACT:
On a surface of one device region defined at a surface of a P-type silicon substrate, a gate electrode is formed on a thermal oxidation layer. An N-type source diffusion layer is formed at the surface of the device region, and a P-type substrate contact layer is formed adjacent the source diffusion layer. On the other hand, an N-type drain diffusion layer is formed at the surface of the other device region defined at the surface of the silicon substrate. A P-type emitter diffusion layer is formed at the surface of the center portion of the drain diffusion layer. The P-type emitter diffusion layer is confined in the drain diffusion layer. Also, an emitter terminal is connected to the emitter diffusion layer. A collector-source terminal is connected to source diffusion layer and a substrate contact layer. Also, a gate terminal is connected to the gate electrode.

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