Semiconductor device

Details Semiconductor device Semiconductor device

1992-08-25

1994-05-17

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257544, 257546, H01L 2968, H01L 2978

Patent

active

053130863

ABSTRACT:
A semiconductor device includes a P-type semiconductor substrate, an N-type well region formed on the surface of the substrate, a P-type well region formed in the N-type well region and a MOSFET as a flash memory element formed in the P-type well region. Upon erasure of the information in the flash memory, a high voltage is temporarily charged to the P-type and N-type well regions, in such a manner that a first high voltage pulse of a predetermined width is charged to the N-type well region, a second high voltage pulse having a pulse width narrower than the pulse width of the first pulse is charged to the P-type well region in a period between the initiation end and the termination end of the first pulse.

REFERENCES:
patent: 4158238 (1979-06-01), Erb
patent: 5043597 (1991-08-01), Furuyama et al.
"An 80-ns 1-Mb Flash Memory with On-Chip Erase/Erase-Verify Controller" by K. Seki et al., IEEE, vol. 25, No. 5, Oct. 1990.

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