Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Patent
1997-12-29
1999-12-14
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
257488, 257545, H01L 2358
Patent
active
060021586
ABSTRACT:
A high breakdown-voltage diode is provided, which has a decreased chip area and a low electric resistance between anode and cathode regions after the breakdown phenomenon takes place. A semiconductor layer of a first conductivity type is vertically isolated by a first isolation dielectric and laterally isolated by a second isolation dielectric from outside. A first diffusion region of a second conductivity type is formed in a surface area of the semiconductor layer, thereby forming a first p-n junction. A second diffusion region of the first conductivity type is formed in the surface area to be apart from the first diffusion region. A third diffusion region of the second conductivity type is formed in the surface area between the first and second diffusion regions, thereby forming a second p-n junction. The third diffusion region is electrically connected to the first diffusion region. A depletion region formed at the second p-n junction grows according to a reverse voltage applied across the first and second diffusion regions, so that each end of the depletion region extends to a surface of the third diffusion region and to the first isolation dielectric while no breakdown occurs at the first p-n junction, relaxing an electric filed existing near the first p-n junction.
REFERENCES:
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4713681 (1987-12-01), Beasom
patent: 5241210 (1993-08-01), Nakagawa et al.
patent: 5631491 (1997-05-01), Matsuzaki
Eckert II George C.
NEC Corporation
Saadat Mahshid
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