Distributed MOSFET structure with enclosed gate for improved tra

Details Distributed MOSFET structure with enclosed gate for improved tra Distributed MOSFET structure with enclosed gate for improved tra

1997-09-16

1999-12-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257357, 257360, 257401, H01L 2976

Patent

active

06002156&

ABSTRACT:
A MOSFET structure uses angled poly-gate segments positioned between drain and source diffusion regions such that the entire continuous gate element structure is within the active region in a substrate. The gate-to-source diffusion edges are continuous along the gate body, so as to cascade the snap-back action to enhance uniform turn on of the entire gate element during an ESD event. The angled gate segments provide a total gate-to-area ratio greater than that of a multi-finger-gate configuration within an equal size active region. In addition, the gate signal RC delay is sufficient to provide noise suppression of the output voltage when the MOSFET is used as a high current-drive CMOS output buffer.

REFERENCES:
patent: 5355008 (1994-10-01), Moyer et al.
patent: 5635742 (1997-06-01), Hoshi et al.
patent: 5757046 (1998-05-01), Fujihira et al.
patent: 5852315 (1998-12-01), Ker et al.

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