Compound material T gate structure for devices with gate dielect

Details Compound material T gate structure for devices with gate dielect Compound material T gate structure for devices with gate dielect

1998-06-17

1999-12-14

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257336, 257344, 257410, 257411, H01L 2976

Patent

active

060021500

ABSTRACT:
An integrated circuit and process for making the same is provided in which a gate electrode including a gate dielectric and a gate conductor is formed upon a semiconductor substrate. Preferably, the gate dielectric has a dielectric constant greater than the dielectric constant of silicon dioxide. In an embodiment, the gate dielectric is formed from a first compound material, and the gate conductor is formed from a second compound material different from the first compound material. Preferably, the gate dielectric is selectively etched such that a portion of the gate conductor extends beyond sidewall surfaces of the gate dielectric, forming a T-shaped gate electrode. In an embodiment, a first ion implantation is used to form lightly doped drain areas aligned with the gate dielectric sidewall surfaces using a large tilt angle implant. Source and drain implant areas are then formed self-aligned with the sidewalls of opposed sidewall spacers using a second ion implant. Alternatively, the lightly doped drain implant areas and the source/drain implant areas may be formed simultaneously using a single high-energy ion implant. A metal silicide layer may be formed across upper surfaces of the source and drain areas without the need for forming spacers adjacent the gate electrode to prevent silicide bridging.

REFERENCES:
patent: 5596214 (1997-01-01), Endo
patent: 5619051 (1997-04-01), Endo

Affiliated with

Also associated with

Rating

Compound material T gate structure for devices with gate dielect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound material T gate structure for devices with gate dielect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound material T gate structure for devices with gate dielect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-865935