Integrated dual layer emitter mask and emitter trench for BiCMOS

Details Integrated dual layer emitter mask and emitter trench for BiCMOS Integrated dual layer emitter mask and emitter trench for BiCMOS

1997-07-14

1999-01-05

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257370, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

058566970

ABSTRACT:
A new method of isolating a polysilicon emitter from the base region of a bipolar transistor, trenching the polysilicon emitter into the semiconductor substrate, and maintaining a consistent base width of a bipolar transistor independent of variations in emitter mask thicknesses is disclosed. The polysilicon emitter isolation provides for better electrical breakdown characteristics between the emitter and the base by protecting the dielectric layer between the polysilicon emitter and base regions from defects and contamination associated with the BiCMOS manufacturing environment. The polysilicon emitter is trenched into the semiconductor substrate in order to reduce transistor operation problems associated with hot electron injection. Consistent base widths improve transistor performance uniformity thereby improving manufacturability and reliability.

REFERENCES:
patent: 4435898 (1984-03-01), Gaur et al.
patent: 5132234 (1992-07-01), Kim et al.
patent: 5175606 (1992-12-01), Tsai et al.
patent: 5192992 (1993-03-01), Kim et al.
patent: 5196356 (1993-03-01), Won et al.
patent: 5198372 (1993-03-01), Verret et al.
patent: 5204277 (1993-04-01), Somero et al.
patent: 5213989 (1993-05-01), Fitch et al.
patent: 5319235 (1994-06-01), Kihara et al.
Wolf, S. and Tauber, R. "Silicon Processing for the VLSI Era," Lattice Press, vol 1, pp., 531, 532 (1986).

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