Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-03-04
1999-12-14
Everhart, Caridad
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
437681, 437648, 118718, 118723MP, H01L 21441
Patent
active
060017368
ABSTRACT:
An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.
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Jinnouchi Shinpei
Kaizuka Takeshi
Kawano Yumiko
Kondo Eiichi
Ohta Tomohiro
Everhart Caridad
Kawasaki Steel Corporation
Tokyo Electron Limited
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