Method of manufacturing semiconductor device and an apparatus fo

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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437681, 437648, 118718, 118723MP, H01L 21441

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active

060017368

ABSTRACT:
An insulating layer is provided on a semiconductor substrate, a contact hole is formed in the insulating layer, and an underlying metal film is provided on a whole surface of the substrate including inner walls of the contact hole. A surface condition of the underlying metal film is adjusted by a hydrogen plasma treatment. By the hydrogen plasma treatment, a surface of the underlying metal film is hydrogenated and is sputter-etched, so that a disordered film and contaminants adsorbed on the surface of the underlying metal film are removed. Next, aluminum is deposited on the underlying metal film by a chemical vapor deposition process using an organic aluminum compound such as DMAH. The contact hole can be effectively filled with aluminum.

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T. Kosugi et al., "Novel Si Surface Cleaning Technology with Plasma Hydrogenation and Its Application to Selective CVD-W Clad Layer Formation", 1995 Symposium on VLSI Technology Digest of Technical Papers, NTT LSI Laboratories, 1995, pp. 41 and 42.
Sugai et al., "Sub-Micron Aluminum Metallization Technology Using a Combination of CVD and Sputtering", 1993 VLSI Multilevel Interconnection Conference, p. 463.
Shinzawa et al., "Adhesion layerless submicron Al damascene interconnections using novel Al-CVD", 1994 Symposium on VLSI Technology Digest of Technical Papers, pp. 77.

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