Selective metallization/deposition for semiconductor devices

Details Selective metallization/deposition for semiconductor devices Selective metallization/deposition for semiconductor devices

1997-06-20

1999-12-14

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, 438681, H01L 21205

Patent

active

060017228

ABSTRACT:
A method of selective metallization/deposition including patterning a mask on the surface of a substrate structure to define contact areas, and utilizing a compound, including a metal, which dissociates under predetermined conditions. The dissociation and application of the predetermined conditions occurring either during deposition or after deposition to selectively form a layer of the metal on the contact areas.

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patent: 5730798 (1998-03-01), Shirlaagi
patent: 5756154 (1998-05-01), Shiralagi et al.
patent: 5759880 (1998-06-01), Shiralagi et al.
patent: 5788747 (1998-08-01), Horiuchi et al.
patent: 5846609 (1998-12-01), Shiralagi
patent: 5877071 (1999-03-01), Shiralagi et al.

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