Insulated gate field effect semiconductor device and forming met

Details Insulated gate field effect semiconductor device and forming met Insulated gate field effect semiconductor device and forming met

1995-06-02

1999-12-14

Niebling, John F.

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

438564, 438584, H01L 2120, H01L 2136

Patent

active

060017120

ABSTRACT:
In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is in contact with a gate insulating film and is contained at a high concentration in the second semiconductor layer which is not in contact with the gate insulating film. Accordingly, By existence of the first semiconductor layer is which the impurity is not doped, the impurity is prevented from penetrating through the gate insulating film from the gate electrode and diffusing into the channel forming region. Also, by existence of the second semiconductor layer in which high concentration impurity is doped, the gate electrode has low resistance.

REFERENCES:
patent: 4354309 (1982-10-01), Gardiner
patent: 4394191 (1983-07-01), Wada
patent: 5021849 (1991-06-01), Pfiester et al.
patent: 5237196 (1993-08-01), Mikata et al.
patent: 5429972 (1995-07-01), Anjum et al.
patent: 5470794 (1995-11-01), Anjum et al.

Affiliated with

Also associated with

Rating

Insulated gate field effect semiconductor device and forming met does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulated gate field effect semiconductor device and forming met, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulated gate field effect semiconductor device and forming met will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-862847