Method of forming a field programmable device

Details Method of forming a field programmable device Method of forming a field programmable device

1995-05-03

1999-01-05

Tsai, Jey

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438131, 148DIG55, H01L 2144

Patent

active

058562338

ABSTRACT:
A method is provided for forming a field programmable device of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A first conductive layer is formed. A first, fusible, dielectric layer is formed over the first conductive layer. The dielectric layer is patterned and etched to form a plurality of dielectric regions exposing portions of the first conductive layer. A second dielectric layer is then formed over the dielectric regions and the exposed portions of the first conductive layer. A plurality of contact openings through the second dielectric layer are formed to expose portions of the first conductive layer and portions of the dielectric regions. A second conductive layer is then formed over the second dielectric layer and in the contact openings.

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Liu et al., "Scaled Dielectric Antifuse Structure for Field-Programmable Gate Array Applications," IEEE Electron Device Letters, vol. 12, No. 4 Apr. 1991, New York, USA, pp. 151-153.

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