Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-12
1999-08-03
Trinh, Michael
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438644, 438685, H01L 2148, H01L 21283
Patent
active
059337583
ABSTRACT:
A method for forming a copper interconnect (54) begins by depositing a barrier layer (48). An intermediate layer (50) is formed over the barrier layer (48) by exposing the barrier layer (48) to a plasma silane environment. The layer (50) is conductive when deposited so that contact resistance is not affected. The layer (50) is insitu covered with a copper seed layer (52). The layer (52) is not formed in an edge exclusion region (20) thereby exposing a portion (50a) of the layer (50). This portion (50a) will natively oxidize in a room ambient to form a copper electroplating prevention barrier whereby copper will not electroplate in the region (20). Therefore, the region (50a) prevents barrier-to-copper interfaces to avoid delamination of the copper while preserving the edge exclusion region desired for copper electroplating.
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Guerrero Maria
Motorola Inc.
Trinh Michael
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