Plasma enhanced CVD apparatus, plasma enhanced processing appara

Details Plasma enhanced CVD apparatus, plasma enhanced processing appara Plasma enhanced CVD apparatus, plasma enhanced processing appara

1996-10-03

1999-01-05

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

118723I, 118723E, H05H 100

Patent

active

058556850

ABSTRACT:
By forming at least one annular groove in each of electrical insulation members provided between a plasma generating electrode and a processing chamber, the insulation performance of the electrical insulation members are prevented from degradation during deposition of conductive films onto a substrate. The plasma generating electrode is substantially a coil of one turn and provided with a pair of introduction portions passing through a wall of the processing chamber. An insulation ring made of quartz glass is installed between each of the introduction portion and the processing chamber. The insulation ring has a round through hole in the center of a disc and three concentric protrusions, each of which is in the shape of an annulus ring, are formed at one side of the disc (the side exposed in the processing chamber). Two annular grooves are made between the protrusions. Each of the protrusions are 50 mm high, 1 mm thick, and 1 mm wide.

REFERENCES:
Observation of Ion Scattering from Metal Surfaces Bombarded with Low-Energy Hydrocarbon Ions; Yoshihito Mitsuoka et al; Jpn. J. Appl. Phys. vol. 34 (1995) pp. L516-L519; Apr. 1995.
8th Symposium On Plasma Science for Materials; Japan Society for the Promotion of Science, Committee 153 (Plasma Materials Science); p. 87; 1995.
Electrostatic Coupling of Antenna and the Shielding Effect in Inductive RF Plasmas; Hideo Sugai et al.; Jpn. J. Appl. Phys. vol. 33 (1994); pp. 2189-2193; Part 1, No. 4B, Apr. 1994.
RF Plasma Production at Ultralow Pressures with Surface Magnetic Confinement; Teruyuki Shirakawa et al.; Japanese Journal of Applied Physics; vol. 29, No. 6, Jun. 1990, pp. L1015-L1018.

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