Non-volatile semiconductor memory device

Details Non-volatile semiconductor memory device Non-volatile semiconductor memory device

1993-03-01

1995-02-28

Nguyen, Viet Q.

Static information storage and retrieval

Systems using particular element

Semiconductive

365185, G11C 1134

Patent

active

053943570

ABSTRACT:
A non-volatile semiconductor memory cell includes a floating gate dielectrically disposed between a first and a second control gate. The non-volatile memory cell can only be addressed for programming or deprogramming by the simultaneous energization of the first and second control gates. With this unique feature, any memory cell in an memory array can be randomly accessed. Moreover, the two control gates associated with each of the floating gate also increase the coupling capacitances, thereby speeding up operations. The non-volatile memory device of the present invention is ideal to be used for large scale integration applications in which memory cells are arranged in a NAND structure.

REFERENCES:
patent: 5111430 (1992-05-01), Morie

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