Method for selectively etching AlGaAs

Details Method for selectively etching AlGaAs Method for selectively etching AlGaAs

1992-11-25

1995-01-10

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156654, 437225, 437228, H01L 2100, H01L 2102, H01L 21306, B44C 122

Patent

active

053803981

ABSTRACT:
A method for semiconductor device fabrication that uses a mixture of SiCl.sub.4, CF.sub.4, O.sub.2, and He to selectively etch GaAs with respect to AlGaAs. Etch selectivities greater than 300:1 are obtained.

REFERENCES:
patent: 4705593 (1987-11-01), Haigh et al.
patent: 5043776 (1991-08-01), Hida
J. Vac. Sci. Technol., B9(6), Nov./Dec. 1991, "Selective Reactive Ion Etching and GaAs/AlGaAs Metal-Semiconductor Field," by Cameron et al., pp. 3538-3541.
J. Vac. Sci. Technol., B6(1), Jan./Feb. 1988, "Selective Reactive Ion Etching of GaAs on AlGaAs Using CCI.sub.2 F.sub.2 and He," by A. Seabaugh, pp. 77-81.
Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, "Selective Dry Etching of AlGaAs-GaAS Heterojunction," by Hikosaka, et al., pp. L847-L850.
J. Vac. Sci. Technol., B9(5), Sep./Oct. 1991, "Dry-etch Monitoring of III-V Heterostructures Using Laser Reflectometry and Optical Emission Spectroscopy," by Collot et al., pp. 2497-2502.
Solid State Technology, Nov. 1988, "Plasma Etching for III-V Compound Devices," by D. E. Ibbotson et al., pp. 105-108, 137-138.
Ibbotson, Plasma Etching for III-V Compound Devices, Part II, Solid State Tech., Nov. 1988, pp. 105-108.
Ehrlich, Laser-Induced Microscopic Etching of GaAs and InP, Appl. Phys. Lett. 36(8), Apr. 1980, pp. 698-700.
Asakawa, GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching System, Jap. Jour. of Appl. Phys., vol. 22, No. 10, Oct. 1983, pp. L653-L655.

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