Metal treatment – Barrier layer stock material – p-n type – With recess – void – dislocation – grain boundaries or channel...
Patent
1993-07-14
1995-01-10
Powell, William A.
Metal treatment
Barrier layer stock material, p-n type
With recess, void, dislocation, grain boundaries or channel...
156628, 156644, 156647, 156651, 156657, 156662, 437228, 437927, H01L 2130, H01L 21306, B44C 122
Patent
active
053803736
ABSTRACT:
The present invention comprises a first process to enclose a floating single crystal thin film with a enclosure material which is hardly affected by an isotropic etchant using a face with the lowest etch rate against an anisotropic etchant as a front surface of a single crystal substrate, a second process to cover a portion of or the entire surface of the single crystal substrate with a cover material which is hardly etched by the anisotropic etchant nor by the isotropic etchant, a third process to form an etched groove by etching and removing a portion of the single crystal substrate in the outer side or under a region enclosed by the enclosure material using the isotropic etchant, and a fourth process to deposit a floating single crystal thin film by etching and removing a portion of the single crystal thin film using the anisotropic etchant and making use of the etched groove.
REFERENCES:
patent: 4783237 (1988-11-01), Aine et al.
patent: 5129983 (1992-07-01), Greiff
patent: 5242863 (1993-09-01), Xiang-Zheng et al.
Kimura Mitsuteru
Suzuki Noriaki
Powell William A.
Ricoh Seiki Company, Ltd
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