Method of making a SOI film having a more uniform thickness in a

Details Method of making a SOI film having a more uniform thickness in a Method of making a SOI film having a more uniform thickness in a

1993-10-22

1995-02-28

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156657, 156345, 437238, B44C 122, C03C 1500, C03C 2506

Patent

active

053933702

ABSTRACT:
To provide a method of making a SOI film having a more uniform thickness in a SOI substrate which makes it possible to keep the variance at .+-.0.3 micrometers or less throughout the entire surface of the substrate, even for SOI substrates with a SOI film thickness between 1 micrometer and 10 micrometers. The surface of a SOI substrate is divided into a plurality of sections, then the SOI film thickness is measured for each section Wi (i=1-n) by means of the spectral interference method using an optical fiber cable, and, simultaneously, the SOI film is etched down to a prescribed thickness by a dry etching device, and thus a desired value and a variance (.+-.0.3 micrometers) of the SOI film thickness is obtained.

REFERENCES:
patent: 5213657 (1993-05-01), Abe et al.
patent: 5223080 (1993-06-01), Ohta et al.

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