Method of preparing semiconductor surfaces

Details Method of preparing semiconductor surfaces Method of preparing semiconductor surfaces

1981-03-27

1983-04-19

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

134 3, 134 28, 134 29, 156636, 156638, 156903, 252 791, 252 793, 252 794, 252 795, C03C 1500, H01L 21306, C03C 2506

Patent

active

043804900

ABSTRACT:
A method of treating semiconductor surfaces to produce an abrupt dielectric discontinuity between the semiconductor bulk and the ambient is described.

REFERENCES:
patent: 2619414 (1952-11-01), Heidenreich
patent: 3156596 (1964-11-01), Sullivan
patent: 3262825 (1966-07-01), Fuller
patent: 3577286 (1971-05-01), Berkenblit et al.
patent: 3629023 (1971-12-01), Strehlow
patent: 3869324 (1975-03-01), Basi et al.
patent: 3969164 (1976-07-01), Cho
patent: 4184908 (1980-01-01), Lackner et al.
RCA Review, vol. 39, Jun. 1978, Chemical Etching of Silicon, Germanium, Gallium Arsenide, and Gallium Phosphide by W. Kern, pp. 278-308.
Journal of the Electrochemical Society, vol. 123, No. 12, Dec. 1976, Chemical Etching of Silicon by B. Schwartz et al., pp. 1903-1909.

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