Static memory cell

Static information storage and retrieval – Systems using particular element – Flip-flop

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365177, 365188, G11C 1140

Patent

active

052395014

ABSTRACT:
In a static memory, a memory cell is constituted by only the same-channel MOSFETs. With the MOSFETs of the same channel, no well isolation region is required, and a cell size can be decreased. Moreover, the high potential side power source of a flip-flop can be used as a read word line. Thus the read word line can be driven by an ECL logic circuit.

REFERENCES:
patent: 4409679 (1983-10-01), Kurafuji et al.
patent: 4435789 (1984-03-01), Yasuoka
patent: 4862421 (1989-08-01), Tran
patent: 4933899 (1990-06-01), Gibbs
IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988; pp. 1030-1040.

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