Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-19
1999-09-21
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257327, 257336, 257344, 257357, 257358, 257408, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059557605
ABSTRACT:
In one aspect, a method for forming a transistor device on a semiconductor substrate, comprising: a) forming a transistor gate on the substrate; b) forming a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) forming a second polarity internal junction region, the second polarity internal junction region being entirely received within one of the first polarity regions. In another aspect, a transistor device, comprising: a) a transistor gate on a semiconductor substrate; b) a first polarity source active region and a first polarity drain active region operatively adjacent the transistor gate; and c) a second polarity internal junction region entirely received within one of the first polarity regions. In yet another aspect, the invention includes a resistor, comprising: a) a gate on a semiconductor substrate, the gate being electrically powered with a gate voltage; b) a first polarity source active region and a first polarity drain active region operatively adjacent the electrically powered gate; c) a second polarity internal junction region entirely received within one of the first polarity regions; and d) a current between the first polarity source active region and the first polarity drain active region, the current being substantially linearly dependent on a voltage at the drain region.
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Kao David Y.
Wu Jeff Zhiqiang
Micro)n Technology, Inc.
Saadat Mahshid
Wilson Allan R.
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