Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-18
1999-12-07
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257510, H01L 2978
Patent
active
059988487
ABSTRACT:
A field effect transistor with reduced corner device problems comprises source and drain regions formed in a substrate, a channel region between the source and drain regions, isolation regions in the substrate adjacent the source, channel and drain regions; and a gate having a gate dopant over the channel region and separated therefrom by a gate dielectric. The isolation regions define corner regions of the channel along interfaces between the channel and isolation regions. The gate includes regions depleted of the gate dopant and overlapping at least the channel region and the isolation regions, such that voltage thresholds of the channel corner regions beneath depleted portions of the gate conductor layer are increased compared to regions of the channel between the corner regions.
The field effect transistor with reduced dopant concentration on the MOSFET gate "corner" has an improved edge voltage tolerance. The structure has improved edge dielectric breakdown and lower MOSFET gate-induced drain leakage (GIDL). This structure is intended for analog applications, mixed voltage tolerant circuits and electrostatic (ESD) networks.
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Brown Jeffrey S.
Gauthier Jr. Robert J.
Voldman Steven H.
Hardy David B.
International Business Machines - Corporation
Peterson Peter W.
Shkurko Eugene I.
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