Semiconductor device having increased safe operating range

Details Semiconductor device having increased safe operating range Semiconductor device having increased safe operating range

1997-12-22

1999-12-07

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257343, H01L 2976

Patent

active

059988452

ABSTRACT:
The breakdown voltage at high current values can be reduced in a HV-MOST with a weakly doped drain extension and a conventional interdigitated source/drain configuration,so that the SOAR (safe operating area) is reduced. The invention is based inter alia on the recognition that breakdown occurs at the end faces of the drain fingers at high current values owing to current convergences and the accompanying Kirk effect. To widen the SOAR of the transistor, the tips 8 of the drain fingers 5, 6 are rendered inactive in that the source fingers 4 are locally interrupted. In an optimized embodiment, the source fingers 4 shorter than the drain fingers 5,6.

REFERENCES:
patent: 5523599 (1996-06-01), Fujishima et al.
patent: 5719429 (1998-02-01), Yoshida et al.

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