Semiconductor device with gate and control electrodes that provi

Details Semiconductor device with gate and control electrodes that provi Semiconductor device with gate and control electrodes that provi

1996-07-23

1999-12-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257364, 257365, 257379, H01L 2976, H01L 2994, H01L 31062, H01L 31113

Patent

active

059988428

ABSTRACT:
A MOS semiconductor device with control electrodes for improved switching accuracy and operational speeds of the device at reduced power consumption levels. The semiconductor device includes a substrate, a source electrode region and a drain electrode region formed in said substrate, a first gate insulating film formed on said substrate, a semiconductor region formed on said first gate insulating film, a second gate insulating film formed on said semiconductor region, a gate electrode region formed on said second gate insulating film, and at least one control electrode region disposed in contact with said semiconductor region.

REFERENCES:
patent: 4472821 (1984-09-01), Mazin et al.
patent: 4477883 (1984-10-01), Wada
patent: 4862241 (1989-08-01), Ashida et al.

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