Semiconductor device including active matrix circuit

Details Semiconductor device including active matrix circuit Semiconductor device including active matrix circuit

1998-10-05

1999-12-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 71, 257 72, 257296, 257351, 257379, H01L 2701, H01L 2712, H01L 310392

Patent

active

05998841&

ABSTRACT:
There is provided a combination of doping process and use of side walls which allows the source and drain of a thin film transistor of an active matrix circuit to be doped with only one of N-type and P-type impurities and which allows the source and drain of a thin film transistor used in a peripheral circuit of the same conductivity type as that of the thin film transistor of the active matrix circuit to include both of N-type and P-type impurities. Also, a thin film transistor in an active matrix circuit has offset regions by using side walls, and another thin film transistor in a peripheral circuit has a lightly doped region by using side walls.

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