Method of etching copper or copper-doped aluminum

Details Method of etching copper or copper-doped aluminum Method of etching copper or copper-doped aluminum

1997-10-10

1999-12-07

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438688, 438720, 438754, 216 2, 216 13, 216 67, 216 77, 216 78, 216 66, H01L 2144

Patent

active

059982977

ABSTRACT:
An embodiment of the instant invention is a method of etching a conductive structure comprised of copper and overlying a semiconductor substrate, the method comprising the step of: subjecting the conductive structure to a combination of plasma, an etchant, and a gaseous aluminum source. Preferably, the conductive structure is comprised of aluminum and copper (more preferably, it is comprised of aluminum and 1 to 4% by weight copper) or it may be substantially comprised of substantially pure copper. In addition, the etchant is preferably introduced into the process chamber in a gaseous state and is comprised of Cl.sub.2. The gaseous aluminum source may be comprised of: DMAH, trimethylaluminum, dimethylalane, trimethylaminealine, dimethylethylaminealane, dimethylethylaminedimethylalane, or AlCl.sub.3.

REFERENCES:
patent: 4468284 (1984-08-01), Nelson
patent: 4919750 (1990-04-01), Bausmith
Sato, et al., "Al-Cu Alloy Etching Using In-Reactor Aluminum Chloride Formation in Statci Mandetron Triode Reactive Ion Etching," Jpn. J. Appl. Phys., vol. 32(1993), pp. 3013-3018.
Narasimhan et al., "Aluminum-4% Cu Interconnect Etching in a Low-Pressure Magnetically Enhanced Reactor", vol. 10, No. 4, Jul./Aug. 1992, pp. 1100-1105.
Sato et al., "Al-Cu Alloy Etching Using In-reactor Aluminum Chloride Formation in Static Magnetron Triode Reactive Ion Etching", Jpn. J. Appl. Phys. vol. 32 Pt. 1, No. 6B, 1993, pp. 3013-3018.
F. P. Emmenegger, "Stability of Gaseous Complexes between Two-and Three-Valent Metal Halides", Inorganic Chemistry, vol. 16, No. 2, 1977, pp. 343-348.

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