Method to protect gate stack material during source/drain reoxid

Details Method to protect gate stack material during source/drain reoxid Method to protect gate stack material during source/drain reoxid

Filed on

1998-06-15

Date issued

1999-12-07

Examiner

Niebling, John F.

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

Insulated gate formation

Other Related Categories

438303, H01L 213205

Type

Patent

Status

active

Patent number

05998290&

Description

ABSTRACT:
A process of manufacturing a gate stack whereby the integrity of both the gate sidewalls and the substrate surface is maintained. Nitride spacers are constructed on the sidewalls of a gate which has been etched only to the top of the polysilicon layer. This allows more of the polysilicon sidewall to be exposed during subsequent reoxidation while at the same time minimizing effects such as bird's beak resulting during reoxidation. After the nitride spacers are constructed the subsequent etch is performed in two steps in order to minimize degradation of the substrate surface in underlying active regions.

REFERENCES:
patent: 5087584 (1992-02-01), Wada et al.
patent: 5103272 (1992-04-01), Nishiyama
patent: 5268330 (1993-12-01), Givens et al.
patent: 5382551 (1995-01-01), Thakur et al.
patent: 5422291 (1995-06-01), Clementi et al.
patent: 5425392 (1995-06-01), Thakur et al.
patent: 5438016 (1995-08-01), Figura et al.
patent: 5439838 (1995-08-01), Yang
patent: 5538906 (1996-07-01), Aoki
patent: 5545578 (1996-08-01), Park et al.
patent: 5597756 (1997-01-01), Fazan et al.
patent: 5624865 (1997-04-01), Schuegraf et al.
patent: 5668394 (1997-09-01), Lur et al.
patent: 5739066 (1998-04-01), Pan
Wolf et al., Silicon Processing for the VLSI Era: vol. 3, p. 596, 1995.
Beyers, R., "Thermodynamic Considerations in Refractory Metal Silicon-Oxygen Systems", J. Appl. Phys., 56, 147-152, (Jul. 1984).
Kasai, K., et al., "W/WNx/Poly-Si Gate Technology for Future High Speed Deep Submicron CMOS LSIs", IEDM 1994, 497-500, (1994).
Lee, D.H., et al., "Gate Oxide Integrity (GOI) of MOS transistors with W/TiN stacked gate", 1996 Symposium on VLSI Technology Digest of Technical Papers, 208-209, (1996).

Affiliated with

Also associated with

Rating

Method to protect gate stack material during source/drain reoxid does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to protect gate stack material during source/drain reoxid, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to protect gate stack material during source/drain reoxid will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-823139