Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1997-09-18
1999-12-07
Gupta, Yogendra
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419215, C23C 1400, C23C 1434
Patent
active
059976985
ABSTRACT:
An Fe--Zr--N base thin film composed of a metal nitride is formed by reactive sputtering. At the reactive sputtering step, the stress of the thin film is controlled by causing relative movement of the substrate with respect to a target in such a manner that the substrate can be periodically opposite to the target, or applying a negative bias voltage to the substrate, or performing said relative movement of the substrate with the application of the negative bias voltage to the substrate.
REFERENCES:
patent: 5117321 (1992-05-01), Nakanishi et al.
patent: 5240583 (1993-08-01), Ahonen
patent: 5262915 (1993-11-01), Terunuma et al.
patent: 5382305 (1995-01-01), Terunuma et al.
patent: 5384021 (1995-01-01), Thwaites
patent: 5403457 (1995-04-01), Nago et al.
patent: 5473492 (1995-12-01), Terunuma et al.
Mino Tetsuya
Uno Yasufumi
Gupta Yogendra
Mruk Brian P.
TDK Corporation
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