Process for setting a working rate distribution in an etching or

Details Process for setting a working rate distribution in an etching or Process for setting a working rate distribution in an etching or

1996-11-26

1999-12-07

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723MW, 20429838, H05H 100

Patent

active

059976861

ABSTRACT:
A process and apparatus for setting a working rate distribution along a work surface which is being AC plasma-enhanced reactively coated, or reactively or non-reactively etched in an AC plasma, and in which process a plasma volume of given volume is utilized, comprises placing the work surface in the plasma volume, positioning a setting surface of a distribution setting body opposite the work surface, the setting body being surrounded by the plasma volume substantially on all sides of the setting body, and setting the working rate distribution by selecting either the material of the setting surface, the quality of the setting surface, a distance relationship between the setting surface and the work surface, or the shape of the setting surface.

REFERENCES:
patent: 4297162 (1981-10-01), Mundt et al.
patent: 4342901 (1982-08-01), Zajac
patent: 4367114 (1983-01-01), Steinberg et al.
patent: 4624767 (1986-11-01), Obinata
patent: 4844775 (1989-07-01), Keeble
patent: 5074985 (1991-12-01), Tamura et al.
patent: 5102496 (1992-04-01), Savas
patent: 5284544 (1994-02-01), Mizatani et al.
patent: 5391281 (1995-02-01), Hieronymi et al.

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