Method for reduction of filaments between electrodes

Details Method for reduction of filaments between electrodes Method for reduction of filaments between electrodes

1989-01-23

1989-11-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 1566591, 156662, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

048789968

ABSTRACT:
The disclosure relates to a method for reducing filament formation over the BN+ oxide in semiconductor devices wherein a sidewall oxide is formed on the side walls of the first polysilicon layer prior to subsequent formation of the intermediate insulating layer, formation of a second polysilicon layer and subsequent anisotropic etch to provide for removal of all polysilicon over the field oxide.

REFERENCES:
patent: 4749443 (1988-06-01), Mitchell et al.
patent: 4806201 (1989-02-01), Mitchell et al.

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