Method for producing a semiconductor device comprising a refract

Details Method for producing a semiconductor device comprising a refract Method for producing a semiconductor device comprising a refract

1995-04-25

1999-03-16

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438656, 438683, H01L 21324

Patent

active

058830030

ABSTRACT:
A method for forming a low resistance refractory metal silicide film of a reduced film thickness is disclosed. The heat treatment temperature required for phase transition to lower the resistance of said silicide film is reduced by restricting the "removal" temperature at which the film is exposed to oxygen containing atmosphere following silicification heat treatment to a low temperature. By lamp annealing in an inert gas atmosphere or vacuum, and setting the removal temperature to less than or equal to 300.degree. C., formation of excess oxygen containing layers are prevented leading to lower phase transition temperature. By lowering the phase transition temperature, the problem of film breakage or increase in resistance due to agglomeration is also prevented.

REFERENCES:
patent: 4109372 (1978-08-01), Geffken
patent: 5086017 (1992-02-01), Lu
patent: 5180689 (1993-01-01), Liu et al.
patent: 5217922 (1993-06-01), Akasaki et al.
patent: 5231038 (1993-07-01), Yamaguchi et al.
patent: 5240880 (1993-08-01), Hindman et al.
patent: 5266136 (1993-11-01), Nasr
patent: 5300449 (1994-04-01), Okamura
patent: 5352631 (1994-10-01), Sitaram et al.
patent: 5397744 (1995-03-01), Sumi et al.
M. Moslehi, "Single-Wafer Optical Processing of Semiconductors: Thin Insulator Growth for Integrated Electronic Device Applications", Appl. Phys. A, vol. 46, pp. 255-273, 1988.
Mallardeau et al, "Characterization of TiSi.sub.2 Ohmic and Scholtky Contacts Formed by Rapid Thermal Annealing Technology", J. Electrochem. Soc., vol. 136, No. 1, Jan. 1989, pp. 238-241.
by M. Wittmer et al., "Oxidation kinetics of TiN thin films", Journal of Applied Physics, vol. 52, (11), Nov. 1981, pp. 6659-6664.
by T.P. Nolan et al., "Modeling of agglomeration of polycrystalline thin films: Applications to TiSi.sub.2 on a silicon substrate", Journal of Applied Physics, vol. 71 (2), Jan. 1992, pp. 720-724.
by Tatsuya Yamazaki et al., "21 psec switching 0.1.mu.m-CMOS at room temperature using high performance Co salicide process", IEDM 93, Japan.

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